Self-doped Molecular Mott Insulator for Bilayer High-Temperature Superconducting La3Ni2O7

Summary

The study explores the concept of a self-doped molecular Mott insulator in the context of bilayer high-temperature superconducting La Ni O. It proposes that La Ni O is a self-doped molecular Mott insulator, with a molecular Mott limit formed by two nearly degenerate antisymmetric d and d orbitals.

Highlights

• The bilayer structure of La Ni O provides a new platform for investigating correlation and superconductivity.
• The molecular Mott insulator limit is formed by the bonding band due to Hubbard interaction and large interlayer coupling.
• The self-doped molecular Mott insulator is similar to the doped Mott insulator studied in cuprates.
• La Ni O is proposed as a self-doped molecular Mott insulator, with a molecular Mott limit formed by two nearly degenerate antisymmetric d and d orbitals.
• The partial occupation of higher energy symmetric d orbital leads to self-doping, which may be responsible for high-temperature superconductivity in La Ni O.
• The study uses a bilayer Hubbard model to demonstrate the self-doped molecular Mott insulator.
• The effective theory for the self-doped molecular Mott insulator is described by a t-J model.

Key Insights

• The concept of a self-doped molecular Mott insulator provides a new perspective on the mechanism of high-temperature superconductivity in La Ni O.
• The molecular Mott limit is formed by the bonding band due to Hubbard interaction and large interlayer coupling, which is a key feature of the self-doped molecular Mott insulator.
• The self-doped molecular Mott insulator is similar to the doped Mott insulator studied in cuprates, suggesting a common underlying mechanism for high-temperature superconductivity.
• The partial occupation of higher energy symmetric d orbital leads to self-doping, which may be responsible for high-temperature superconductivity in La Ni O.
• The study uses a bilayer Hubbard model to demonstrate the self-doped molecular Mott insulator, providing a theoretical framework for understanding the mechanism of high-temperature superconductivity.
• The effective theory for the self-doped molecular Mott insulator is described by a t-J model, which is a simplified model that captures the essential physics of the system.
• The self-doped molecular Mott insulator provides a new platform for investigating correlation and superconductivity, and may lead to new insights into the mechanism of high-temperature superconductivity.

Mindmap

Citation

Wang, Z., Jiang, K., & Zhang, F.-C. (2024). Self-doped Molecular Mott Insulator for Bilayer High-Temperature Superconducting La3Ni2O7 (Version 1). arXiv. https://doi.org/10.48550/ARXIV.2412.18469