Achieving low contact resistance through copper-intercalated bilayer MoS2

Summary

The research focuses on achieving low contact resistance in 2D electronic devices, specifically using copper-intercalated bilayer MoS2 as electrodes in a field-effect transistor (FET) structure. The study demonstrates significant reduction in contact resistance, nearing or surpassing the quantum limit for single-layer materials.

Highlights

• Theoretical design of a MoS2-based transistor featuring bilayer MoS2 connected to Cu-intercalated bilayer MoS2 electrodes.
• Achievement of low contact resistance: 16.7 Ω·μm (zigzag direction) and 30.0 Ω·μm (armchair direction) at 0.6 V.
• Elimination of the tunneling barrier and creation of ohmic contacts contribute to the low resistance.
• Small contact potential difference enables lower operating voltages.
• Intercalation design offers a novel approach to achieving low contact resistance in 2D electronic devices.
• The device meets the current requirements of the International Technology Roadmap for Semiconductors (ITRS) 2028 for high-performance devices.
• The study provides insights into the gate regulation performance and the origins of the low contact resistance.

Key Insights

• The use of copper-intercalated bilayer MoS2 as electrodes significantly reduces contact resistance in 2D electronic devices, making it a promising approach for improving device performance.
• The elimination of the tunneling barrier and the creation of ohmic contacts are key factors contributing to the low contact resistance achieved in the study.
• The small contact potential difference in the device enables lower operating voltages, which is beneficial for energy-efficient applications.
• The intercalation design provides a novel and effective method for achieving low contact resistance in 2D electronic devices, addressing a prevalent challenge in the field.
• The device's ability to meet the ITRS 2028 requirements for high-performance devices highlights its potential for practical applications in the near future.
• The study's findings offer valuable insights into the gate regulation performance of 2D electronic devices, shedding light on the mechanisms underlying their operation.
• The research demonstrates the importance of material engineering and device design in optimizing the performance of 2D electronic devices, paving the way for further innovations in the field.

Mindmap

Citation

Wang, H., Liu, X., Wang, H., Wang, Y., & Yin, H. (2024). Achieving low contact resistance through copper-intercalated bilayer MoS2 (Version 1). arXiv. https://doi.org/10.48550/ARXIV.2412.18385